savantic semiconductor product specification silicon npn power transistors 2SC3235 d escription with to-220 package high voltage,high speed low saturation voltage applications for high voltage ,high speed and high power switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 500 v v ceo collector- emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 2 a i cm collector current-peak 4 a p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3235 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma; i b =0 400 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 7 v v cesat collector-emitter saturation voltage i c =1a; i b =0.2 a 1.0 v v besat base-emitter saturation voltage i c =1a; i b =0.2 a 1.5 v i cbo collector cut-off current v cb =400v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe dc current gain i c =0.1a ; v ce =5v 20 50
savantic semiconductor product specification 3 silicon npn power transistors 2SC3235 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
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